Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis

Single photons from single CdSe quantum dot embedded in ZnSe nanowire

We report the growth of ZnSe nanowires and nanoneedles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn–Se flux ratio. By employing a combined MBE growth of nanowires and nanoneedles without any postprocessing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electro...

Low temperature solution-phase growth of ZnSe and ZnSe/CdSe core/shell nanowires.

High quality ZnSe nanowires (NWs) and complementary ZnSe/CdSe core/shell species have been synthesized using a recently developed solution-liquid-solid (SLS) growth technique. In particular, bismuth salts as opposed to pre-synthesized Bi or Au/Bi nanoparticles have been used to grow NWs at low temperatures in solution. Resulting wires are characterized using transmission electron microscopy and...

Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy

Controlled growth of ZnSe and ZnCdSe nanowires is demonstrated by molecular beam epitaxy using Au or Ag catalyst films in the temperature range 400–550 ◦C. The highest density of small-diameter (10 nm), highly-crystalline ZnSe nanowires is achieved by using Au at 400 ◦C. Direct growth onto transmission electron microscope grids clearly indicates a tip-growth regime. Pre-patterning of the cataly...

Quantitative analysis of optical polarization in semiconductor nanostructures by polarized cathodoluminescence spectroscopy in a transmission electron microscope Microstructure and optical properties of ZnSe nanowires grown on .ZnSe(001) with Fe catalysts Formation mechanism of silicon surface manoholes

Self-organized growth, ripening, and optical properties of wide-bandgap II—VI quantum dots

We discuss the formation of self-assembling II—VI quantum dots during MBE growth, with emphasis on CdSe dots grown on ZnSe. AFM measurements on specimens with uncapped dots show relatively narrow dot size distributions, with typical dot diameters of 35$5 nm. Uncapped CdSe dots are unstable with time, showing clear evidence of ripening. Photoluminescence from capped dots indicates strong exciton...